Instabillities in silicon devices silicon passivation and related instabilities

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Published by North-Holland in Amsterdam, Oxford .

Written in English

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  • Semiconductors.,
  • Silicon -- Electric properties.

Edition Notes

Book details

Statementedited by Gérard Barbottin and André Vapaille. Vol.1.
ContributionsBarbottin, Gérard, 1946-, Vapaille, André, 1933-
LC ClassificationsTK7871.85
The Physical Object
Paginationxxiv,517p. :
Number of Pages517
ID Numbers
Open LibraryOL21438397M
ISBN 100444879447

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Instabilities in Silicon Devices. Explore book series content Latest volume All volumes. Latest volumes. Volume 3. 2– () View all volumes. Find out more. About the book series.

Search in this book series. Looking for an author or a specific volume/issue. Chapter 4 Hot carrier injections in SIO 2 and related instabilities in. Instabilities in Silicon Devices, Vol. 1: Silicon Passivation and Related Instabilities [Barbottin, Gerard] on *FREE* shipping on qualifying offers.

Instabilities in Silicon Devices, Vol. 1: Silicon Passivation and Related InstabilitiesAuthor: Gerard Barbottin. These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation.

The problem of instabilities is addressed in this volume, the third of this book series. Instabilities in Silicon Devices: Silicon Passivation and Related Instabilities Hardcover – January 1, by André Barbottin, Gérard; Vapaille (Author)Author: André Barbottin, Gérard; Vapaille.

Search in this book series. New Insulators, Devices and Radiation Effects. Edited by Gérard Barbottin, André Vapaille. Volume 3, Pages () List of errata to volume 1 of instabilities in silicon devices silicon passivation and related instabilities Pages Download PDF.

Instabilities in Silicon Devices. Country: United States - SIR Ranking of United States: 4. H Index. Subject Area and Category: Engineering Electrical and Electronic Engineering Materials Science Electronic, Optical and Magnetic Materials: Publisher: JAI Press: Publication type: Book Series: ISSN: Coverage:   Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices Abstract: In the last 15 years, the global demand for power saving, efficiency, and weight, size, and cost reduction in both the consumer and the industrial fields have strongly pushed the research and advancements in electronic power by: TY - BOOK.

T1 - Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs. AU - Reigosa, Paula Diaz. N1 - PhD supervisor: Prof. Francesco Iannuzzo, Aalborg University, Denmark Assistant PhD supervisor: Prof. Frede Blaabjerg, Aalborg University, DenmarkCited by: 1.

Plasma and Current Instabilities in Semiconductors details the main ideas in the physics of plasma and current instabilities in semiconductors. The title first covers plasma in semiconductors, and then proceeds to tackling waves in plasma.

Next, the selection details wave instabilities in plasma and drift Edition: 1. Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices Article (PDF Available) in IEEE Industrial Electronics Magazine 8(3) September with Abstract.

Electrical instabilities in silicon-on-insulator (SOI) materials and devices during voltage and thermal stressing are fundamentally due to the movement and trapping of charge in the buried oxide (BOX), this being electrically the least robust part of the SOI by: 2.

About this book Silicon is the most important material for the electronics industry. In modern microelectronics silicon devices like diodes and transistors play a major role, and devices like photodetectors or solar cells gain ever more importance.

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We have investigated bias-temperature instabilities (BTIs) in 4H-SiC transistors and capacitors under a range of stress conditions. The threshold voltage V TH of nMOS transistors decreases for elevated temperature stress under negative bias, when the surface is accumulated.

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Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode.

In layered semiconductors domainBrand: Springer US. Today, silicon plays a central role within the semiconductor industry for microelectronic and nanoelectronic devices. Silicon wafers of high purity (% or higher) single-crystalline material can be obtained via a combination of liquid growth methods, such as pulling a seed crystal from the melt and by subsequent epitaxy.

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These technical publications are posted on this site in order to ensure timely public dissemination of NASA technical work. This proceedings volume contains the contributions of the speakers who attended the NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" held at the Sanatorium Pushcha OLema, Kyiv, th Ukraine from It" to 15 October AN OVERVIEW OF SILICON CARBIDE DEVICE TECHNOLOGY Philip G.

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We present a first study of threshold voltage instabilities of semi-vertical GaN-on-Si trench-MOSFETs, based on double pulsed, threshold voltage transient, and UV-assisted C–V analysis. Under positive gate stress, small negative V th shifts (low stress) and a positive V th shifts (high stress) are observed, ascribed to trapping within the insulator and at the metal/insulator : Kalparupa Mukherjee, Matteo Borga, Maria Ruzzarin, Carlo De Santi, Steve Stoffels, Shuzhen You, Kare.

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A wide range of approaches to preventing such instabilities is under investigation, including optimization of the configuration of the plasma and its confinement device, control of the internal structure of the plasma, and active control of the MHD instabilities.

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It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant. Abstract: A new model for high bias transport is reported which describes the time-dependent reverse current variations in amorphous silicon Schottky diodes.

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This Cited by: 1. Negative-bias temperature instability (NBTI) is a key reliability issue in manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation is often approximated by a power-law dependence on time.

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This proceedings volume contains the contributions of the speakers who attended the NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" held at the Sanatorium Pushcha OLema, Kyiv, th.

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