Instabillities in silicon devices silicon passivation and related instabilities

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Published by North-Holland in Amsterdam, Oxford .

Written in English

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Subjects:

  • Semiconductors.,
  • Silicon -- Electric properties.

Edition Notes

Book details

Statementedited by Gérard Barbottin and André Vapaille. Vol.1.
ContributionsBarbottin, Gérard, 1946-, Vapaille, André, 1933-
Classifications
LC ClassificationsTK7871.85
The Physical Object
Paginationxxiv,517p. :
Number of Pages517
ID Numbers
Open LibraryOL21438397M
ISBN 100444879447

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Instabilities in Silicon Devices. Explore book series content Latest volume All volumes. Latest volumes. Volume 3. 2– () View all volumes. Find out more. About the book series.

Search in this book series. Looking for an author or a specific volume/issue. Chapter 4 Hot carrier injections in SIO 2 and related instabilities in. Instabilities in Silicon Devices, Vol. 1: Silicon Passivation and Related Instabilities [Barbottin, Gerard] on *FREE* shipping on qualifying offers.

Instabilities in Silicon Devices, Vol. 1: Silicon Passivation and Related InstabilitiesAuthor: Gerard Barbottin. These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation.

The problem of instabilities is addressed in this volume, the third of this book series. Instabilities in Silicon Devices: Silicon Passivation and Related Instabilities Hardcover – January 1, by André Barbottin, Gérard; Vapaille (Author)Author: André Barbottin, Gérard; Vapaille.

Search in this book series. New Insulators, Devices and Radiation Effects. Edited by Gérard Barbottin, André Vapaille. Volume 3, Pages () List of errata to volume 1 of instabilities in silicon devices silicon passivation and related instabilities Pages Download PDF.

Instabilities in Silicon Devices. Country: United States - SIR Ranking of United States: 4. H Index. Subject Area and Category: Engineering Electrical and Electronic Engineering Materials Science Electronic, Optical and Magnetic Materials: Publisher: JAI Press: Publication type: Book Series: ISSN: Coverage:   Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices Abstract: In the last 15 years, the global demand for power saving, efficiency, and weight, size, and cost reduction in both the consumer and the industrial fields have strongly pushed the research and advancements in electronic power by: TY - BOOK.

T1 - Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs. AU - Reigosa, Paula Diaz. N1 - PhD supervisor: Prof. Francesco Iannuzzo, Aalborg University, Denmark Assistant PhD supervisor: Prof. Frede Blaabjerg, Aalborg University, DenmarkCited by: 1.

Plasma and Current Instabilities in Semiconductors details the main ideas in the physics of plasma and current instabilities in semiconductors. The title first covers plasma in semiconductors, and then proceeds to tackling waves in plasma.

Next, the selection details wave instabilities in plasma and drift Edition: 1. Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices Article (PDF Available) in IEEE Industrial Electronics Magazine 8(3) September with Abstract.

Electrical instabilities in silicon-on-insulator (SOI) materials and devices during voltage and thermal stressing are fundamentally due to the movement and trapping of charge in the buried oxide (BOX), this being electrically the least robust part of the SOI by: 2.

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We have investigated bias-temperature instabilities (BTIs) in 4H-SiC transistors and capacitors under a range of stress conditions. The threshold voltage V TH of nMOS transistors decreases for elevated temperature stress under negative bias, when the surface is accumulated.

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Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode.

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A wide range of approaches to preventing such instabilities is under investigation, including optimization of the configuration of the plasma and its confinement device, control of the internal structure of the plasma, and active control of the MHD instabilities.

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